Information card for entry 4133606

Structure parameters

• Formula: C53 H73 B Ge N4 O Si2
• Calculated formula: C53 H73 B Ge N4 O Si2
• SMILES: [Ge]1(B2C3CCCC2CCC3)[Si]2([N](=C(N2C(C)(C)C)c2ccccc2)C(C)(C)C)c2c3Oc4c([Si]51[N](=C(N5C(C)(C)C)c1ccccc1)C(C)(C)C)cccc4C(C)(c3ccc2)C
• Title of publication: An Isolable Bis(silylene)-Stabilized Germylone and Its Reactivity.
• Authors of publication: Wang, Yuwen; Karni, Miriam; Yao, Shenglai; Apeloig, Yitzhak; Driess, Matthias
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2019
• Journal volume: 141
• Journal issue: 4
• Pages of publication: 1655 - 1664
• a: 27.1176 ± 0.0006 Å
• b: 10.0166 ± 0.0002 Å
• c: 39.9984 ± 0.0011 Å
• α: 90°
• β: 107.426 ± 0.003°
• γ: 90°
• Cell volume: 10366 ± 0.5 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 7
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.045
• Residual factor for significantly intense reflections: 0.0361
• Weighted residual factors for significantly intense reflections: 0.0859
• Weighted residual factors for all reflections included in the refinement: 0.0925
• Goodness-of-fit parameter for all reflections included in the refinement: 1.022
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No