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Information card for entry 4133606
Preview
Coordinates | 4133606.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C53 H73 B Ge N4 O Si2 |
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Calculated formula | C53 H73 B Ge N4 O Si2 |
SMILES | [Ge]1(B2C3CCCC2CCC3)[Si]2([N](=C(N2C(C)(C)C)c2ccccc2)C(C)(C)C)c2c3Oc4c([Si]51[N](=C(N5C(C)(C)C)c1ccccc1)C(C)(C)C)cccc4C(C)(c3ccc2)C |
Title of publication | An Isolable Bis(silylene)-Stabilized Germylone and Its Reactivity. |
Authors of publication | Wang, Yuwen; Karni, Miriam; Yao, Shenglai; Apeloig, Yitzhak; Driess, Matthias |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2019 |
Journal volume | 141 |
Journal issue | 4 |
Pages of publication | 1655 - 1664 |
a | 27.1176 ± 0.0006 Å |
b | 10.0166 ± 0.0002 Å |
c | 39.9984 ± 0.0011 Å |
α | 90° |
β | 107.426 ± 0.003° |
γ | 90° |
Cell volume | 10366 ± 0.5 Å3 |
Cell temperature | 150 ± 2 K |
Ambient diffraction temperature | 150 ± 2 K |
Number of distinct elements | 7 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.045 |
Residual factor for significantly intense reflections | 0.0361 |
Weighted residual factors for significantly intense reflections | 0.0859 |
Weighted residual factors for all reflections included in the refinement | 0.0925 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.022 |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4133606.html
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