Information card for entry 4306766

Structure parameters

• Formula: C18 H40 Ag2 F6 O6 S10 Si2
• Calculated formula: C18 H40 Ag2 F6 O6 S10 Si2
• SMILES: [Ag]12([S](C)C([Si]([C@@H]([S]2C)SC)(C)C)[S](C)[Ag]2([S](C([Si]([C@@H]([S]2C)SC)(C)C)[S]1C)C)OS(=O)(=O)C(F)(F)F)OS(=O)(=O)C(F)(F)F.[Ag]12([S](C)C([Si]([C@H]([S]2C)SC)(C)C)[S](C)[Ag]2([S](C([Si]([C@H]([S]2C)SC)(C)C)[S]1C)C)OS(=O)(=O)C(F)(F)F)OS(=O)(=O)C(F)(F)F
• Title of publication: Silyl-Substituted Thioether Ligands and Their Ag(I) Complexes
• Authors of publication: Chinwon Rim; Hongming Zhang; David Y. Son
• Journal of publication: Inorganic Chemistry
• Year of publication: 2008
• Journal volume: 47
• Pages of publication: 11993 - 12003
• a: 13.5726 ± 0.001 Å
• b: 16.4573 ± 0.0012 Å
• c: 17.8509 ± 0.0013 Å
• α: 90°
• β: 106.19 ± 0.001°
• γ: 90°
• Cell volume: 3829.2 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.056
• Residual factor for significantly intense reflections: 0.053
• Weighted residual factors for significantly intense reflections: 0.133
• Weighted residual factors for all reflections included in the refinement: 0.137
• Goodness-of-fit parameter for all reflections included in the refinement: 1.108
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No