Information card for entry 4306767

Structure parameters

• Formula: C34 H60 Ag4 F12 O12 S16 Si3
• Calculated formula: C34 H60 Ag4 F12 O12 S16 Si3
• SMILES: C[Si]1(C2[S]3[Ag]4(OS(=O)(C(F)(F)F)=O)[S]5C([Si](C)(C)C6[S]7[Ag]8(OS(=O)(C(F)(F)F)=O)[S]9C%10[S]([Ag](OS(=O)(C(F)(F)F)=O)([S]6CCC7)[S]6C([Si]%10(C)C)[S]8CCC6)CCC9)[S]([Ag]([S]2CCC3)([S]2C1[S]4CCC2)OS(=O)(C(F)(F)F)=O)CCC5)C
• Title of publication: Silyl-Substituted Thioether Ligands and Their Ag(I) Complexes
• Authors of publication: Chinwon Rim; Hongming Zhang; David Y. Son
• Journal of publication: Inorganic Chemistry
• Year of publication: 2008
• Journal volume: 47
• Pages of publication: 11993 - 12003
• a: 12.2869 ± 0.0005 Å
• b: 27.6134 ± 0.0011 Å
• c: 9.5143 ± 0.0004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3228 ± 0.2 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 7
• Space group number: 18
• Hermann-Mauguin space group symbol: P 21 21 2
• Hall space group symbol: P 2 2ab
• Residual factor for all reflections: 0.049
• Residual factor for significantly intense reflections: 0.042
• Weighted residual factors for significantly intense reflections: 0.087
• Weighted residual factors for all reflections included in the refinement: 0.09
• Goodness-of-fit parameter for all reflections included in the refinement: 1.086
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No