Information card for entry 4308327

Structure parameters

• Formula: C16 H54 N4 O43 Si V2 W10
• Calculated formula: C16 N4 O43 Si V2 W10
• SMILES: [W]1234(O[V]56(O[V]7(O5)(O[W]589(O[W]%10%11(O1)(O[W]1%12(O3)(O[W]3(O8)(O%10)(O[W]8%10%13(O[W]%14(O7)(O5)(O[W]57(O[W]%15(O6)(O2)(O[W](O5)(O%10)(O1)([O]%137[Si]([O]4%15)([O]9%14)[O]%11%123)=O)=O)(O8)=O)=O)=O)=O)=O)=O)=O)=O)=O)=O.O.O.O.[N+](C)(C)(C)C.[N+](C)(C)(C)C.[N+](C)(C)(C)C.[N+](C)(C)(C)C
• Title of publication: Sterically Controlled Esterification on Bis(μ-hydroxo) Dioxovanadium Site in γ-H2SiV2W10O404-
• Authors of publication: Yoshinao Nakagawa; Kazuhiro Uehara; Noritaka Mizuno
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Pages of publication: 14 - 16
• a: 11.7992 ± 0.0007 Å
• b: 37.804 ± 0.002 Å
• c: 12.7372 ± 0.0008 Å
• α: 90°
• β: 110.308 ± 0.003°
• γ: 90°
• Cell volume: 5328.4 ± 0.5 ų
• Cell temperature: 113.1 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for significantly intense reflections: 0.022
• Weighted residual factors for all reflections included in the refinement: 0.025
• Goodness-of-fit parameter for all reflections included in the refinement: 1.911
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No