Information card for entry 4308673

Structure parameters

• Common name: (2) (Cd3(DMP)4(N(Si(CH3)3)2)2(py)2)
• Formula: C54 H82 Cd3 N4 O4 Si4
• Calculated formula: C54 H82 Cd3 N4 O4 Si4
• SMILES: [Cd]1([O]([Cd]2([O]1c1c(C)cccc1C)[O]([Cd]([O]2c1c(C)cccc1C)(N([Si](C)(C)C)[Si](C)(C)C)[n]1ccccc1)c1c(C)cccc1C)c1c(C)cccc1C)(N([Si](C)(C)C)[Si](C)(C)C)[n]1ccccc1
• Title of publication: Cadmium Amido Alkoxide and Alkoxide Precursors for the Synthesis of Nanocrystalline CdE (E = S, Se, Te)
• Authors of publication: Timothy J. Boyle; Scott D. Bunge; Todd M. Alam; Gregory P. Holland; Thomas J. Headley; Gabriel Avilucea
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Pages of publication: 1309 - 1318
• a: 33.733 ± 0.004 Å
• b: 17.768 ± 0.002 Å
• c: 23.015 ± 0.003 Å
• α: 90°
• β: 98.717 ± 0.002°
• γ: 90°
• Cell volume: 13635 ± 3 ų
• Cell temperature: 203 ± 2 K
• Ambient diffraction temperature: 203 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0979
• Residual factor for significantly intense reflections: 0.0677
• Weighted residual factors for significantly intense reflections: 0.2113
• Weighted residual factors for all reflections included in the refinement: 0.2364
• Goodness-of-fit parameter for all reflections included in the refinement: 1.079
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No