Information card for entry 4322354

Structure parameters

• Formula: C44 H86 B2 Ge Li2 N4 O4 P2
• Calculated formula: C44 H86 B2 Ge Li2 N4 O4 P2
• SMILES: [Ge]1([P]2(B(N(C(C)C)C(C)C)N(C(C)C)C(C)C)[Li]3([P]1(B(N(C(C)C)C(C)C)N(C(C)C)C(C)C)[Li]12[O](CC[O]1C)C)[O](CC[O]3C)C)(c1ccccc1)c1ccccc1
• Title of publication: Synthesis and Chemistry of Bis(borylphosphino)silanes and -germanes
• Authors of publication: Tuqiang Chen; Eileen N. Duesler; Robert T. Paine; Heinrich Nöth
• Journal of publication: Inorganic Chemistry
• Year of publication: 1999
• Journal volume: 38
• Pages of publication: 4993 - 4999
• a: 11.083 ± 0.001 Å
• b: 14.978 ± 0.001 Å
• c: 18.134 ± 0.002 Å
• α: 91.17 ± 0.001°
• β: 101.43 ± 0.01°
• γ: 110.05 ± 0.01°
• Cell volume: 2758.9 ± 0.5 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 8
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0896
• Residual factor for significantly intense reflections: 0.0417
• Weighted residual factors for significantly intense reflections: 0.081
• Weighted residual factors for all reflections included in the refinement: 0.0918
• Goodness-of-fit parameter for all reflections included in the refinement: 1.036
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No