Information card for entry 4324793

Structure parameters

• Formula: C41 H50 N4 Si
• Calculated formula: C41 H50 N4 Si
• SMILES: CC1=CC(=C)N(c2c(cccc2C(C)C)C(C)C)[Si]2(c3ccccc3NN2c2ccccc2)N1c1c(cccc1C(C)C)C(C)C
• Title of publication: Formation of Silicon Centered Spirocyclic Compounds: Reaction of N-Heterocyclic Stable Silylene with Benzoylpyridine, Diisopropyl Azodicarboxylate, and 1,2-Diphenylhydrazine
• Authors of publication: Ramachandran Azhakar; Sankaranarayana Pillai Sarish; Gašper Tavčar; Herbert W. Roesky; Jakob Hey; Dietmar Stalke; Debasis Koley
• Journal of publication: Inorganic Chemistry
• Year of publication: 2011
• Journal volume: 50
• Pages of publication: 3028 - 3036
• a: 10.989 ± 0.0017 Å
• b: 12.566 ± 0.002 Å
• c: 12.909 ± 0.002 Å
• α: 92.357 ± 0.003°
• β: 93.727 ± 0.003°
• γ: 90.731 ± 0.004°
• Cell volume: 1777.1 ± 0.5 ų
• Cell temperature: 80 ± 2 K
• Ambient diffraction temperature: 80 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0584
• Residual factor for significantly intense reflections: 0.0405
• Weighted residual factors for significantly intense reflections: 0.0895
• Weighted residual factors for all reflections included in the refinement: 0.0979
• Goodness-of-fit parameter for all reflections included in the refinement: 1.03
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No