Information card for entry 4335749

Structure parameters

• Formula: C84 H87 Ge3 N3 P6 Si3
• Calculated formula: C84 H87 Ge3 N3 P6 Si3
• SMILES: [Ge]12[Ge]34[P](C(=[Ge]([P](C=3P(=[N]1[Si](C)(C)C)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1)[P](C=4P(=[N]2[Si](C)(C)C)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1)P(=N[Si](C)(C)C)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Synthesis and Structural Characterization of Base-Stabilized Oligomeric Heterovinylidenes
• Authors of publication: Wing-Por Leung; Wang-Kin Chiu; Thomas C. W. Mak
• Journal of publication: Inorganic Chemistry
• Year of publication: 2013
• Journal volume: 52
• Pages of publication: 9479 - 9486
• a: 16.6973 ± 0.0008 Å
• b: 22.798 ± 0.0011 Å
• c: 23.5002 ± 0.0012 Å
• α: 86.208 ± 0.001°
• β: 78.449 ± 0.001°
• γ: 89.751 ± 0.001°
• Cell volume: 8745 ± 0.7 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1097
• Residual factor for significantly intense reflections: 0.0608
• Weighted residual factors for significantly intense reflections: 0.1453
• Weighted residual factors for all reflections included in the refinement: 0.1623
• Goodness-of-fit parameter for all reflections included in the refinement: 0.899
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No