Information card for entry 4335750

Structure parameters

• Formula: C56 H58 N2 P4 Si2 Sn2
• Calculated formula: C56 H58 N2 P4 Si2 Sn2
• SMILES: C[Si](C)(C)N1[Sn]2[C]3(P(c4ccccc4)c4ccccc4)=P(N([Si](C)(C)C)[Sn]3[C]2(=P1(c1ccccc1)c1ccccc1)P(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Synthesis and Structural Characterization of Base-Stabilized Oligomeric Heterovinylidenes
• Authors of publication: Wing-Por Leung; Wang-Kin Chiu; Thomas C. W. Mak
• Journal of publication: Inorganic Chemistry
• Year of publication: 2013
• Journal volume: 52
• Pages of publication: 9479 - 9486
• a: 10.408 ± 0.0003 Å
• b: 12.8655 ± 0.0004 Å
• c: 20.8788 ± 0.0007 Å
• α: 90°
• β: 101.642 ± 0.001°
• γ: 90°
• Cell volume: 2738.24 ± 0.15 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0439
• Residual factor for significantly intense reflections: 0.0275
• Weighted residual factors for significantly intense reflections: 0.0613
• Weighted residual factors for all reflections included in the refinement: 0.0687
• Goodness-of-fit parameter for all reflections included in the refinement: 1.023
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No