Information card for entry 4338841
Formula |
H20 Mn2 N10 S4 Sn |
Calculated formula |
H20 Mn2 N10 S4 Sn |
Title of publication |
Controlled assembly of zero-, one-, two-, and three-dimensional metal chalcogenide structures. |
Authors of publication |
Yuan, Min; Dirmyer, Matthew; Badding, John; Sen, Ayusman; Dahlberg, Maria; Schiffer, Peter |
Journal of publication |
Inorganic chemistry |
Year of publication |
2007 |
Journal volume |
46 |
Journal issue |
18 |
Pages of publication |
7238 - 7240 |
a |
8.535 ± 0.008 Å |
b |
13.3 ± 0.012 Å |
c |
13.522 ± 0.013 Å |
α |
90° |
β |
90.588 ± 0.016° |
γ |
90° |
Cell volume |
1535 ± 2 Å3 |
Cell temperature |
115 ± 2 K |
Ambient diffraction temperature |
115 ± 2 K |
Number of distinct elements |
5 |
Space group number |
14 |
Hermann-Mauguin space group symbol |
P 1 21/n 1 |
Hall space group symbol |
-P 2yn |
Residual factor for all reflections |
0.0852 |
Residual factor for significantly intense reflections |
0.0844 |
Weighted residual factors for significantly intense reflections |
0.2068 |
Weighted residual factors for all reflections included in the refinement |
0.2071 |
Goodness-of-fit parameter for all reflections included in the refinement |
1.315 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/4338841.html