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Information card for entry 4341031
Preview
Coordinates | 4341031.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C32 H88 N4 O2 Se Si8 Y2 |
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Calculated formula | C32 H88 N4 O2 Se Si8 Y2 |
SMILES | C[Si](C)(N([Y](N([Si](C)(C)C)[Si](C)(C)C)([O]1CCCC1)[Se][Y](N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)[O]1CCCC1)[Si](C)(C)C)C |
Title of publication | Cocrystallization of (μ-S2)(2-) and (μ-S)(2-) and Formation of an [η(2)-S3N(SiMe3)2] Ligand from Chalcogen Reduction by (N2)(2-) in a Bimetallic Yttrium Amide Complex. |
Authors of publication | Corbey, Jordan F.; Fang, Ming; Ziller, Joseph W.; Evans, William J. |
Journal of publication | Inorganic chemistry |
Year of publication | 2015 |
Journal volume | 54 |
Journal issue | 3 |
Pages of publication | 801 - 807 |
a | 10.4237 ± 0.0008 Å |
b | 12.1502 ± 0.001 Å |
c | 12.1856 ± 0.001 Å |
α | 61.9739 ± 0.0009° |
β | 88.8205 ± 0.001° |
γ | 80.5568 ± 0.001° |
Cell volume | 1341.03 ± 0.19 Å3 |
Cell temperature | 143 ± 2 K |
Ambient diffraction temperature | 143 ± 2 K |
Number of distinct elements | 7 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0329 |
Residual factor for significantly intense reflections | 0.0279 |
Weighted residual factors for significantly intense reflections | 0.0677 |
Weighted residual factors for all reflections included in the refinement | 0.0699 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.045 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4341031.html
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