Information card for entry 4342149

Structure parameters

• Formula: C26 H42 Ga2 N4
• Calculated formula: C26 H42 Ga2 N4
• SMILES: C[Ga]1(C)[N](=C(NC(C)(C)C)c2ccccc2)[Ga](C)(C)[N]1=C(NC(C)(C)C)c1ccccc1
• Title of publication: Insertion of benzonitrile into Al-N and ga-N bonds: formation of fused carbatriaza-gallanes/alanes and their subsequent synthesis from amidines and trimethyl-gallium/aluminum.
• Authors of publication: Maheswari, K.; Rao, A. Ramakrishna; Reddy, N. Dastagiri
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 54
• Journal issue: 4
• Pages of publication: 2000 - 2008
• a: 10.6745 ± 0.0007 Å
• b: 9.7298 ± 0.0005 Å
• c: 13.8119 ± 0.0007 Å
• α: 90°
• β: 92.884 ± 0.006°
• γ: 90°
• Cell volume: 1432.7 ± 0.14 ų
• Cell temperature: 150 ± 0.1 K
• Ambient diffraction temperature: 150 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.062
• Residual factor for significantly intense reflections: 0.0519
• Weighted residual factors for significantly intense reflections: 0.1345
• Weighted residual factors for all reflections included in the refinement: 0.1385
• Goodness-of-fit parameter for all reflections included in the refinement: 1.337
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No