Information card for entry 4502065

Structure parameters

• Formula: C4 H22 Ga2 N2 O20 S4
• Calculated formula: C4 H22 Ga2 N2 O20 S4
• Title of publication: A Slow Leak Synthetic Route to Organically Templated Gallium Sulfates
• Authors of publication: Kaufman, Elizabeth A.; Zeller, Matthias; Norquist, Alexander J.
• Journal of publication: Crystal Growth & Design
• Year of publication: 2010
• Journal volume: 10
• Journal issue: 10
• Pages of publication: 4656
• a: 9.5014 ± 0.0013 Å
• b: 9.9391 ± 0.0013 Å
• c: 10.7737 ± 0.0014 Å
• α: 105.676 ± 0.0016°
• β: 90.0129 ± 0.0015°
• γ: 90.2245 ± 0.0015°
• Cell volume: 979.6 ± 0.2 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0289
• Residual factor for significantly intense reflections: 0.0259
• Weighted residual factors for all reflections: 0.0822
• Weighted residual factors for significantly intense reflections: 0.0767
• Weighted residual factors for all reflections included in the refinement: 0.0758
• Goodness-of-fit parameter for all reflections included in the refinement: 1.0108
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No