Information card for entry 4502066

Structure parameters

• Formula: C6 H26 Ga2 N2 O20 S4
• Calculated formula: C6 H26 Ga2 N2 O20 S4
• Title of publication: A Slow Leak Synthetic Route to Organically Templated Gallium Sulfates
• Authors of publication: Kaufman, Elizabeth A.; Zeller, Matthias; Norquist, Alexander J.
• Journal of publication: Crystal Growth & Design
• Year of publication: 2010
• Journal volume: 10
• Journal issue: 10
• Pages of publication: 4656
• a: 5.6262 ± 0.0007 Å
• b: 8.9854 ± 0.001 Å
• c: 10.3386 ± 0.0012 Å
• α: 87.2207 ± 0.0014°
• β: 82.1832 ± 0.0013°
• γ: 87.5904 ± 0.0013°
• Cell volume: 516.86 ± 0.11 ų
• Cell temperature: 110 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0182
• Residual factor for significantly intense reflections: 0.0177
• Weighted residual factors for all reflections: 0.0508
• Weighted residual factors for significantly intense reflections: 0.0484
• Weighted residual factors for all reflections included in the refinement: 0.0481
• Goodness-of-fit parameter for all reflections included in the refinement: 1.0171
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No