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Information card for entry 4506887
Preview
| Coordinates | 4506887.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C42 H50 Co2 N8 O18 |
|---|---|
| Calculated formula | C42 H50 Co2 N8 O18 |
| Title of publication | Fabrication of ZrO2and ZrN Films by Metalorganic Chemical Vapor Deposition Employing New Zr Precursors |
| Authors of publication | Banerjee, Manish; Srinivasan, Nagendra Babu; Zhu, Huaizhi; Kim, Sun Ja; Xu, Ke; Winter, Manuela; Becker, Hans-Werner; Rogalla, Detlef; de los Arcos, Teresa; Bekermann, Daniela; Barreca, Davide; Fischer, Roland A.; Devi, Anjana |
| Journal of publication | Crystal Growth & Design |
| Year of publication | 2012 |
| Journal volume | 12 |
| Journal issue | 10 |
| Pages of publication | 5079 |
| a | 10.3375 ± 0.0006 Å |
| b | 15.2574 ± 0.0015 Å |
| c | 15.087 ± 0.0015 Å |
| α | 90° |
| β | 91.745 ± 0.007° |
| γ | 90° |
| Cell volume | 2378.5 ± 0.4 Å3 |
| Cell temperature | 200 ± 2 K |
| Ambient diffraction temperature | 200 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 4 |
| Hermann-Mauguin space group symbol | P 1 21 1 |
| Hall space group symbol | P 2yb |
| Residual factor for all reflections | 0.0711 |
| Residual factor for significantly intense reflections | 0.0422 |
| Weighted residual factors for significantly intense reflections | 0.0868 |
| Weighted residual factors for all reflections included in the refinement | 0.0955 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | Mokα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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