Information card for entry 4516594
| Formula |
C18 H16 N2 O4 S2 |
| Calculated formula |
C18 H16 N2 O4 S2 |
| SMILES |
C1(=O)c2c(cc(s2)c2cc3c(C(=O)C(=O)N3CCC)s2)N(C1=O)CCC |
| Title of publication |
n-Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives |
| Authors of publication |
Yoo, Dongho; Luo, Xuyi; Hasegawa, Tsukasa; Ashizawa, Minoru; Kawamoto, Tadashi; Masunaga, Hiroyasu; Ohta, Noboru; Matsumoto, Hidetoshi; Mei, Jianguo; Mori, Takehiko |
| Journal of publication |
ACS Applied Electronic Materials |
| Year of publication |
2019 |
| Journal volume |
1 |
| Journal issue |
5 |
| Pages of publication |
764 |
| a |
4.96243 ± 0.00019 Å |
| b |
7.6511 ± 0.0003 Å |
| c |
12.2057 ± 0.0005 Å |
| α |
102.765 ± 0.003° |
| β |
92.376 ± 0.002° |
| γ |
106.291 ± 0.003° |
| Cell volume |
431.17 ± 0.03 Å3 |
| Cell temperature |
212 K |
| Ambient diffraction temperature |
212 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0736 |
| Residual factor for significantly intense reflections |
0.0654 |
| Weighted residual factors for significantly intense reflections |
0.151 |
| Weighted residual factors for all reflections included in the refinement |
0.1566 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.964 |
| Diffraction radiation wavelength |
1.54187 Å |
| Diffraction radiation type |
CuKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4516594.html
