Information card for entry 4516595

Structure parameters

• Formula: C24 H28 N2 O4 S2
• Calculated formula: C24 H28 N2 O4 S2
• SMILES: C1(=O)C(=O)c2c(cc(s2)c2cc3c(C(=O)C(=O)N3CCCCCC)s2)N1CCCCCC
• Title of publication: n-Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives
• Authors of publication: Yoo, Dongho; Luo, Xuyi; Hasegawa, Tsukasa; Ashizawa, Minoru; Kawamoto, Tadashi; Masunaga, Hiroyasu; Ohta, Noboru; Matsumoto, Hidetoshi; Mei, Jianguo; Mori, Takehiko
• Journal of publication: ACS Applied Electronic Materials
• Year of publication: 2019
• Journal volume: 1
• Journal issue: 5
• Pages of publication: 764
• a: 33.028 ± 0.003 Å
• b: 5.02936 ± 0.00018 Å
• c: 14.9494 ± 0.0005 Å
• α: 90°
• β: 111.402 ± 0.003°
• γ: 90°
• Cell volume: 2312 ± 0.2 ų
• Cell temperature: 171 K
• Ambient diffraction temperature: 171 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0622
• Residual factor for significantly intense reflections: 0.0562
• Weighted residual factors for significantly intense reflections: 0.1505
• Weighted residual factors for all reflections included in the refinement: 0.156
• Goodness-of-fit parameter for all reflections included in the refinement: 1.089
• Diffraction radiation wavelength: 1.54187 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No