Information card for entry 4516599

Structure parameters

• Formula: C12 H10 F2 N4 Ni
• Calculated formula: C12 H10 F2 N4 Ni
• Title of publication: Ambipolar Transistor Properties of Metal Complexes Derived from 1,2-Phenylenediamines
• Authors of publication: Kitamori, Toshiki; Yoo, Dongho; Iijima, Kodai; Kawamoto, Tadashi; Mori, Takehiko
• Journal of publication: ACS Applied Electronic Materials
• Year of publication: 2019
• Journal volume: 1
• Journal issue: 8
• Pages of publication: 1633
• a: 6.0153 ± 0.0003 Å
• b: 7.3861 ± 0.0005 Å
• c: 12.9529 ± 0.0007 Å
• α: 90°
• β: 92.641 ± 0.003°
• γ: 90°
• Cell volume: 574.88 ± 0.06 ų
• Cell temperature: 274 K
• Ambient diffraction temperature: 274 K
• Number of distinct elements: 5
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.1156
• Residual factor for significantly intense reflections: 0.0742
• Weighted residual factors for significantly intense reflections: 0.1153
• Weighted residual factors for all reflections included in the refinement: 0.1371
• Goodness-of-fit parameter for all reflections included in the refinement: 0.982
• Diffraction radiation wavelength: 1.54187 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No