Information card for entry 4516600

Structure parameters

• Formula: C12 H8 F4 N4 Ni
• Calculated formula: C12 H8 F4 N4 Ni
• Title of publication: Ambipolar Transistor Properties of Metal Complexes Derived from 1,2-Phenylenediamines
• Authors of publication: Kitamori, Toshiki; Yoo, Dongho; Iijima, Kodai; Kawamoto, Tadashi; Mori, Takehiko
• Journal of publication: ACS Applied Electronic Materials
• Year of publication: 2019
• Journal volume: 1
• Journal issue: 8
• Pages of publication: 1633
• a: 6.41864 ± 0.00014 Å
• b: 7.70588 ± 0.00017 Å
• c: 12.5919 ± 0.0003 Å
• α: 105.965 ± 0.0012°
• β: 93.574 ± 0.0013°
• γ: 98.3156 ± 0.0012°
• Cell volume: 589.07 ± 0.02 ų
• Cell temperature: 274 K
• Ambient diffraction temperature: 274 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.079
• Residual factor for significantly intense reflections: 0.0506
• Weighted residual factors for significantly intense reflections: 0.1158
• Weighted residual factors for all reflections included in the refinement: 0.1553
• Goodness-of-fit parameter for all reflections included in the refinement: 1.164
• Diffraction radiation wavelength: 1.54187 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No