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Information card for entry 4516990
Preview
Coordinates | 4516990.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C14 H20 Ge O Si2 |
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Calculated formula | C14 H20 Ge O Si2 |
SMILES | [Ge]123[c]4(ccc[cH]14)[Si](O[Si]([c]12ccc[cH]31)(C)C)(C)C |
Title of publication | Synthesis, Structure, and Reactivity of Disiloxa[3]tetrelocenophanes. |
Authors of publication | Wirtz, Lisa; Jourdain, Matthias; Huch, Volker; Zimmer, Michael; Schäfer, André |
Journal of publication | ACS omega |
Year of publication | 2019 |
Journal volume | 4 |
Journal issue | 19 |
Pages of publication | 18355 - 18360 |
a | 6.4984 ± 0.0003 Å |
b | 15.098 ± 0.0008 Å |
c | 16.2057 ± 0.0008 Å |
α | 90° |
β | 100.832 ± 0.002° |
γ | 90° |
Cell volume | 1561.66 ± 0.13 Å3 |
Cell temperature | 152 ± 2 K |
Ambient diffraction temperature | 152 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0353 |
Residual factor for significantly intense reflections | 0.0238 |
Weighted residual factors for significantly intense reflections | 0.0603 |
Weighted residual factors for all reflections included in the refinement | 0.0636 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.02 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4516990.html
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