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Information card for entry 7000100
Preview
Coordinates | 7000100.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C4 H14 Ga N |
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Calculated formula | C4 H14 Ga N |
SMILES | C(C)([NH2][GaH3])(C)C |
Title of publication | Synthesis and structural characterisation of primary amine adducts of gallane, RH2N.GaH3, and of their decomposition products, [RHNGaH2]n(R = Me, n= 3; R =tBu, n= 2). |
Authors of publication | Marchant, Sarah; Tang, Christina Y.; Downs, Anthony J.; Greene, Tim M.; Himmel, Hans-Jörg; Parsons, Simon |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2005 |
Journal issue | 20 |
Pages of publication | 3281 - 3290 |
a | 16.223 ± 0.002 Å |
b | 7.9767 ± 0.0011 Å |
c | 6.0427 ± 0.001 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 781.96 ± 0.19 Å3 |
Cell temperature | 220 K |
Ambient diffraction temperature | 220 K |
Number of distinct elements | 4 |
Space group number | 62 |
Hermann-Mauguin space group symbol | P n m a |
Hall space group symbol | -P 2ac 2n |
Residual factor for all reflections | 0.0634 |
Residual factor for significantly intense reflections | 0.0467 |
Weighted residual factors for all reflections | 0.1212 |
Weighted residual factors for significantly intense reflections | 0.1174 |
Weighted residual factors for all reflections included in the refinement | 0.1212 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.8755 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/7000100.html
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