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Information card for entry 7000099
Preview
Coordinates | 7000099.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C H8 Ga N |
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Calculated formula | C H8 Ga N |
SMILES | [GaH3][NH2]C |
Title of publication | Synthesis and structural characterisation of primary amine adducts of gallane, RH2N.GaH3, and of their decomposition products, [RHNGaH2]n(R = Me, n= 3; R =tBu, n= 2). |
Authors of publication | Marchant, Sarah; Tang, Christina Y.; Downs, Anthony J.; Greene, Tim M.; Himmel, Hans-Jörg; Parsons, Simon |
Journal of publication | Dalton transactions (Cambridge, England : 2003) |
Year of publication | 2005 |
Journal issue | 20 |
Pages of publication | 3281 - 3290 |
a | 12.351 ± 0.003 Å |
b | 4.9484 ± 0.001 Å |
c | 14.51 ± 0.003 Å |
α | 90° |
β | 92.552 ± 0.003° |
γ | 90° |
Cell volume | 885.9 ± 0.3 Å3 |
Cell temperature | 150 K |
Ambient diffraction temperature | 150 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | I 1 2/a 1 |
Hall space group symbol | -I 2ya |
Residual factor for all reflections | 0.0254 |
Residual factor for significantly intense reflections | 0.022 |
Weighted residual factors for all reflections | 0.0543 |
Weighted residual factors for significantly intense reflections | 0.0534 |
Weighted residual factors for all reflections included in the refinement | 0.0543 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.9947 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/7000099.html
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