Information card for entry 7002919

Structure parameters

• Formula: C22 H28 Br2 Cl4 Ga2 Si2
• Calculated formula: C22 H28 Br2 Cl4 Ga2 Si2
• SMILES: Brc1ccccc1/C=C(\[Ga]1(Cl)[Cl][Ga]([Cl]1)(Cl)/C(=C\c1c(cccc1)Br)[Si](C)(C)C)[Si](C)(C)C
• Title of publication: The influence of halogen substituents on the course of hydrogallation and hydroalumination reactions
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander; Jasper, Beate; Vinogradov, Andrej; van Wüllen, Leo; Köster, Thomas K.-J.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 47
• Pages of publication: 10550 - 10562
• a: 10.0545 ± 0.001 Å
• b: 11.9883 ± 0.0012 Å
• c: 14.4057 ± 0.0015 Å
• α: 109.544 ± 0.002°
• β: 95.946 ± 0.002°
• γ: 97.35 ± 0.002°
• Cell volume: 1602.9 ± 0.3 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1086
• Residual factor for significantly intense reflections: 0.065
• Weighted residual factors for significantly intense reflections: 0.1763
• Weighted residual factors for all reflections included in the refinement: 0.2023
• Goodness-of-fit parameter for all reflections included in the refinement: 0.991
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No