Information card for entry 7002920

Structure parameters

• Formula: C24 H42 Br2 Cl4 Ga2 O2 Si2
• Calculated formula: C24 H42 Br2 Cl4 Ga2 O2 Si2
• SMILES: C(=C\c1c(cc(/C=C(\[Ga]([O](CC)CC)(Cl)Cl)[Si](C)(C)C)c(c1)Br)Br)([Ga]([O](CC)CC)(Cl)Cl)/[Si](C)(C)C
• Title of publication: The influence of halogen substituents on the course of hydrogallation and hydroalumination reactions
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander; Jasper, Beate; Vinogradov, Andrej; van Wüllen, Leo; Köster, Thomas K.-J.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 47
• Pages of publication: 10550 - 10562
• a: 12.215 ± 0.003 Å
• b: 13.579 ± 0.003 Å
• c: 12.506 ± 0.003 Å
• α: 90°
• β: 114.753 ± 0.004°
• γ: 90°
• Cell volume: 1883.8 ± 0.8 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.051
• Residual factor for significantly intense reflections: 0.0347
• Weighted residual factors for significantly intense reflections: 0.0731
• Weighted residual factors for all reflections included in the refinement: 0.0777
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No