Information card for entry 7002922

Structure parameters

• Formula: C22 H26 Br4 Cl4 Ga2 Si2
• Calculated formula: C22 H26 Br4 Cl4 Ga2 Si2
• SMILES: C(=C\c1c(Br)cccc1Br)(/[Ga]1(Cl)[Cl][Ga](C(=C\c2c(cccc2Br)Br)\[Si](C)(C)C)(Cl)[Cl]1)[Si](C)(C)C
• Title of publication: The influence of halogen substituents on the course of hydrogallation and hydroalumination reactions
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander; Jasper, Beate; Vinogradov, Andrej; van Wüllen, Leo; Köster, Thomas K.-J.
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 47
• Pages of publication: 10550 - 10562
• a: 10.877 ± 0.0013 Å
• b: 11.5567 ± 0.0014 Å
• c: 14.4469 ± 0.0017 Å
• α: 90°
• β: 110.536 ± 0.002°
• γ: 90°
• Cell volume: 1700.6 ± 0.4 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.073
• Residual factor for significantly intense reflections: 0.0364
• Weighted residual factors for significantly intense reflections: 0.0714
• Weighted residual factors for all reflections included in the refinement: 0.0812
• Goodness-of-fit parameter for all reflections included in the refinement: 0.965
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No