Information card for entry 7009192

Structure parameters

• Formula: C32 H53 Ge N3 Se2 Si2
• Calculated formula: C32 H53 Ge N3 Se2 Si2
• SMILES: [Ge]([Se]c1ccccc1)([Se]c1ccccc1)(N(C1CCCCC1)/C(=N/C1CCCCC1)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Oxidative addition to M(II) (M = Ge, Sn) amidinate complexes: routes to group 14 chalcogenolates with hypervalent coordination environments
• Authors of publication: Foley, Stephen R.; Yap, Glenn P. A.; Richeson, Darrin S.
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 2000
• Journal issue: 10
• Pages of publication: 1663
• a: 10.828 ± 0.001 Å
• b: 25.14 ± 0.003 Å
• c: 26.674 ± 0.003 Å
• α: 90°
• β: 98.304 ± 0.002°
• γ: 90°
• Cell volume: 7185 ± 1.4 ų
• Cell temperature: 203 ± 2 K
• Ambient diffraction temperature: 203 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0785
• Residual factor for significantly intense reflections: 0.0366
• Weighted residual factors for significantly intense reflections: 0.061
• Weighted residual factors for all reflections included in the refinement: 0.0641
• Goodness-of-fit parameter for all reflections included in the refinement: 1.006
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No