Information card for entry 7009193

Structure parameters

• Formula: C32 H53 N3 S2 Si2 Sn
• Calculated formula: C32 H53 N3 S2 Si2 Sn
• SMILES: [Sn]1(Sc2ccccc2)([N](C2CCCCC2)=C(N1C1CCCCC1)C)N([Si](C)(C)C)[Si](C)(C)C.[S-]c1ccccc1
• Title of publication: Oxidative addition to M(II) (M = Ge, Sn) amidinate complexes: routes to group 14 chalcogenolates with hypervalent coordination environments
• Authors of publication: Foley, Stephen R.; Yap, Glenn P. A.; Richeson, Darrin S.
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 2000
• Journal issue: 10
• Pages of publication: 1663
• a: 13.234 ± 0.002 Å
• b: 15.834 ± 0.002 Å
• c: 19.023 ± 0.002 Å
• α: 88.728 ± 0.002°
• β: 80.465 ± 0.002°
• γ: 67.232 ± 0.002°
• Cell volume: 3621 ± 0.8 ų
• Cell temperature: 203 ± 2 K
• Ambient diffraction temperature: 203 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0758
• Residual factor for significantly intense reflections: 0.0393
• Weighted residual factors for significantly intense reflections: 0.0791
• Weighted residual factors for all reflections included in the refinement: 0.0867
• Goodness-of-fit parameter for all reflections included in the refinement: 1.002
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No