Information card for entry 7009270

Structure parameters

• Formula: C33 H64 Ga2 Mn2 O8 Si6
• Calculated formula: C33 H64 Ga2 Mn2 O8 Si6
• SMILES: [Ga]1([Mn]2([Ga]([Mn]12(C#[O])(C#[O])(C#[O])C#[O])C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C#[O])(C#[O])(C#[O])C#[O])C([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C.C1CCCC1
• Title of publication: Replacement of CO ligands by the isolobal gallium(I) compound GaR [R = C(SiMe3)3], formation of the transition metal gallium compounds Mn2(CO)8(μ-GaR)2 and Fe3(CO)9(μ-CO)(μ-GaR)2
• Authors of publication: Uhl, Werner; Benter, Maike; Prött, Malte
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 2000
• Journal issue: 5
• Pages of publication: 643
• a: 21.2302 ± 0.0017 Å
• b: 9.4767 ± 0.0004 Å
• c: 23.7715 ± 0.0018 Å
• α: 90°
• β: 95.39 ± 0.009°
• γ: 90°
• Cell volume: 4761.5 ± 0.6 ų
• Cell temperature: 193 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1405
• Residual factor for significantly intense reflections: 0.0521
• Weighted residual factors for significantly intense reflections: 0.1159
• Weighted residual factors for all reflections included in the refinement: 0.1603
• Goodness-of-fit parameter for all reflections included in the refinement: 0.655
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No