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Information card for entry 7010035
Preview
Coordinates | 7010035.cif |
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Original paper (by DOI) | HTML |
Common name | [C6H4(NCH2tBu)2CSn(NCH2tBu)2C6H4] |
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Formula | C33 H52 N4 Sn |
Calculated formula | C33 H52 N4 Sn |
Title of publication | Crystalline (NN)C‒M(NN) complexes: synthesis, structure, bonding and lability [M = Si, Ge, Sn or Pb; (NN) = 1,2-(ButCH2N)2C6H4] |
Authors of publication | Gehrhus, Barbara; Hitchcock, Peter B.; Lappert, Michael F. |
Journal of publication | Journal of the Chemical Society, Dalton Transactions |
Year of publication | 2000 |
Journal issue | 18 |
Pages of publication | 3094 |
a | 10.396 ± 0.003 Å |
b | 16.059 ± 0.005 Å |
c | 20.2 ± 0.04 Å |
α | 90° |
β | 103.39 ± 0.06° |
γ | 90° |
Cell volume | 3281 ± 7 Å3 |
Cell temperature | 173 ± 2 K |
Ambient diffraction temperature | 173 ± 2 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0812 |
Residual factor for significantly intense reflections | 0.0472 |
Weighted residual factors for significantly intense reflections | 0.0942 |
Weighted residual factors for all reflections included in the refinement | 0.1079 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.008 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/7010035.html
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