Information card for entry 7010036
| Common name |
[C6H4(NCH2tBu)2CPb(NCH2tBu)2C6H4] |
| Formula |
C33 H52 N4 Pb |
| Calculated formula |
C33 H52 N4 Pb |
| SMILES |
[Pb]1(N(c2c(N1CC(C)(C)C)cccc2)CC(C)(C)C)=C1N(c2c(N1CC(C)(C)C)cccc2)CC(C)(C)C |
| Title of publication |
Crystalline (NN)C‒M(NN) complexes: synthesis, structure, bonding and lability [M = Si, Ge, Sn or Pb; (NN) = 1,2-(ButCH2N)2C6H4] |
| Authors of publication |
Gehrhus, Barbara; Hitchcock, Peter B.; Lappert, Michael F. |
| Journal of publication |
Journal of the Chemical Society, Dalton Transactions |
| Year of publication |
2000 |
| Journal issue |
18 |
| Pages of publication |
3094 |
| a |
10.421 ± 0.004 Å |
| b |
16.015 ± 0.004 Å |
| c |
20.254 ± 0.01 Å |
| α |
90° |
| β |
102.61 ± 0.04° |
| γ |
90° |
| Cell volume |
3299 ± 2 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0705 |
| Residual factor for significantly intense reflections |
0.0408 |
| Weighted residual factors for significantly intense reflections |
0.0764 |
| Weighted residual factors for all reflections included in the refinement |
0.0856 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.989 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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