Information card for entry 7011818

Structure parameters

• Formula: C36 H35 Ge N O2 Si2
• Calculated formula: C36 H35 Ge N O2 Si2
• Title of publication: Novel germanium(ii) binaphthoxide complexes: synthesis and crystal structure of (R,R)-[Ge{OC20H10(OSiMe3)-2'-(SiMe3)2-3,3'}2] and (R)-[Ge{O2C20H10(SiMe2Ph)2-3,3'}{NH3}]; catalytic function of Ge[N(SiMe3)2]2 for the mono-silylation of 3,3'-disubstituted-1,1'-bi-2,2'-naphthols
• Authors of publication: Weinert, Charles S.; Fanwick, Phillip E.; Rothwell, Ian P.
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 2002
• Journal issue: 15
• Pages of publication: 2948
• a: 8.3277 ± 0.0002 Å
• b: 10.4652 ± 0.0003 Å
• c: 36.0635 ± 0.0008 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3142.97 ± 0.14 ų
• Cell temperature: 150 K
• Ambient diffraction temperature: 150 K
• Number of distinct elements: 6
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for significantly intense reflections: 0.044
• Weighted residual factors for all reflections included in the refinement: 0.077
• Goodness-of-fit parameter for all reflections included in the refinement: 1.007
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MO-Kα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No