Information card for entry 7012574

Structure parameters

• Formula: C36 H84 N3 P6 Sb Se6
• Calculated formula: C36 H84 N3 P6 Sb Se6
• SMILES: N1=P(C(C)C)(C(C)C)[Se][Sb]23([Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]2)([Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]3)[Se]=P1(C(C)C)C(C)C
• Title of publication: Imino-bis(diisopropylphosphine chalcogenide) complexes of arsenic, antimony and bismuth. Synthesis, CVD studies and X-ray structure of M[N(EPiPr2)2]n (E = Se, S; M = As, Sb, Bi)
• Authors of publication: Crouch, David J.; Helliwell, Madeline; O'Brien, Paul; Park, Jin-Ho; Waters, John; Williams, David J.
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 8
• Pages of publication: 1500 - 1504
• a: 24.959 ± 0.004 Å
• b: 12.9416 ± 0.0017 Å
• c: 19.316 ± 0.003 Å
• α: 90°
• β: 119.819 ± 0.004°
• γ: 90°
• Cell volume: 5413.2 ± 1.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0203
• Residual factor for significantly intense reflections: 0.0181
• Weighted residual factors for significantly intense reflections: 0.0418
• Weighted residual factors for all reflections included in the refinement: 0.0424
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No