Information card for entry 7012575

Structure parameters

• Formula: C36 H84 Bi N3 P6 Se6
• Calculated formula: C36 H84 Bi N3 P6 Se6
• SMILES: [Bi]123([Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]1)([Se]=P(N=P(C(C)C)(C(C)C)[Se]3)(C(C)C)C(C)C)[Se]=P(C(C)C)(C(C)C)N=P(C(C)C)(C(C)C)[Se]2
• Title of publication: Imino-bis(diisopropylphosphine chalcogenide) complexes of arsenic, antimony and bismuth. Synthesis, CVD studies and X-ray structure of M[N(EPiPr2)2]n (E = Se, S; M = As, Sb, Bi)
• Authors of publication: Crouch, David J.; Helliwell, Madeline; O'Brien, Paul; Park, Jin-Ho; Waters, John; Williams, David J.
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 8
• Pages of publication: 1500 - 1504
• a: 25.3 ± 0.003 Å
• b: 13.0081 ± 0.0014 Å
• c: 19.672 ± 0.003 Å
• α: 90°
• β: 120.203 ± 0.01°
• γ: 90°
• Cell volume: 5595.3 ± 1.4 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.1059
• Residual factor for significantly intense reflections: 0.0517
• Weighted residual factors for all reflections: 0.1107
• Weighted residual factors for significantly intense reflections: 0.0903
• Goodness-of-fit parameter for all reflections: 0.992
• Goodness-of-fit parameter for significantly intense reflections: 1.077
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No