Information card for entry 7013428

Structure parameters

• Formula: C6 H19 Cl3 Ga N Si2
• Calculated formula: C6 H19 Cl3 Ga N Si2
• Title of publication: Reactivity of GaX3 with silylamines and thermal decomposition of the compounds [Cl2Ga{NH(SiMe3)}]2 and [Cl3Ga{NH(SiMe3)2}]
• Authors of publication: Carmalt, Claire J.; Mileham, John D.; White, Andrew J. P.; Williams, David J.
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 22
• Pages of publication: 4255
• a: 13.1596 ± 0.0007 Å
• b: 11.8563 ± 0.0005 Å
• c: 19.657 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3067 ± 0.4 ų
• Cell temperature: 183 ± 2 K
• Ambient diffraction temperature: 183 ± 2 K
• Number of distinct elements: 6
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0715
• Residual factor for significantly intense reflections: 0.0537
• Weighted residual factors for significantly intense reflections: 0.1322
• Weighted residual factors for all reflections included in the refinement: 0.1413
• Goodness-of-fit parameter for all reflections included in the refinement: 1.016
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No