Information card for entry 7013429

Structure parameters

• Formula: C8 H20 Cl4 Ga2 N2
• Calculated formula: C8 H20 Cl4 Ga2 N2
• SMILES: [Ga]1(Cl)([NH](C(C)(C)C)[Ga]([NH]1C(C)(C)C)(Cl)Cl)Cl
• Title of publication: Reactivity of GaX3 with silylamines and thermal decomposition of the compounds [Cl2Ga{NH(SiMe3)}]2 and [Cl3Ga{NH(SiMe3)2}]
• Authors of publication: Carmalt, Claire J.; Mileham, John D.; White, Andrew J. P.; Williams, David J.
• Journal of publication: Dalton Transactions
• Year of publication: 2003
• Journal issue: 22
• Pages of publication: 4255
• a: 6.4619 ± 0.001 Å
• b: 11.8491 ± 0.0015 Å
• c: 10.73 ± 0.002 Å
• α: 90°
• β: 96.286 ± 0.013°
• γ: 90°
• Cell volume: 816.6 ± 0.2 ų
• Cell temperature: 183 ± 2 K
• Ambient diffraction temperature: 183 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0406
• Residual factor for significantly intense reflections: 0.0345
• Weighted residual factors for all reflections: 0.107
• Weighted residual factors for significantly intense reflections: 0.0928
• Goodness-of-fit parameter for all reflections: 1.206
• Goodness-of-fit parameter for significantly intense reflections: 1.208
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No