Information card for entry 7014743

Structure parameters

• Formula: C28 H76 As2 Bi4 Cl4 Si8
• Calculated formula: C28 H76 As2 Bi4 Cl4 Si8
• SMILES: C([Bi]1([As]([As]([Bi]2(C([Si](C)(C)C)[Si](C)(C)C)[Cl]1)[Bi]1(C([Si](C)(C)C)[Si](C)(C)C)[Cl]2)[Bi]2(C([Si](C)(C)C)[Si](C)(C)C)[Cl]1)[Cl]2)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Dichloro organosilicon bismuthanes as precursors for rare compounds with a bismuth-pnictogen or bismuth-tellurium bond.
• Authors of publication: Traut, Stephan; Hähnel, Alexander Peter; von Hänisch, Carsten
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2011
• Journal volume: 40
• Journal issue: 6
• Pages of publication: 1365 - 1371
• a: 9.4714 ± 0.0019 Å
• b: 12.499 ± 0.003 Å
• c: 13.486 ± 0.003 Å
• α: 95.73 ± 0.03°
• β: 102 ± 0.03°
• γ: 93.67 ± 0.03°
• Cell volume: 1547.9 ± 0.6 ų
• Cell temperature: 190 ± 2 K
• Ambient diffraction temperature: 190 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.057
• Residual factor for significantly intense reflections: 0.0436
• Weighted residual factors for significantly intense reflections: 0.1162
• Weighted residual factors for all reflections included in the refinement: 0.1208
• Goodness-of-fit parameter for all reflections included in the refinement: 1.013
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No