Information card for entry 7014744

Structure parameters

• Formula: C25 H73 Bi Si10 Te2
• Calculated formula: C25 H73 Bi Si10 Te2
• SMILES: [Si]([Si](C)(C)C)([Si](C)(C)C)([Si](C)(C)C)[Te][Bi]([Te][Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)C([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Dichloro organosilicon bismuthanes as precursors for rare compounds with a bismuth-pnictogen or bismuth-tellurium bond.
• Authors of publication: Traut, Stephan; Hähnel, Alexander Peter; von Hänisch, Carsten
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2011
• Journal volume: 40
• Journal issue: 6
• Pages of publication: 1365 - 1371
• a: 9.3558 ± 0.0019 Å
• b: 30.934 ± 0.006 Å
• c: 17.645 ± 0.004 Å
• α: 90°
• β: 90.67 ± 0.03°
• γ: 90°
• Cell volume: 5106.3 ± 1.8 ų
• Cell temperature: 180 ± 2 K
• Ambient diffraction temperature: 180 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0714
• Residual factor for significantly intense reflections: 0.0616
• Weighted residual factors for significantly intense reflections: 0.1626
• Weighted residual factors for all reflections included in the refinement: 0.1697
• Goodness-of-fit parameter for all reflections included in the refinement: 1.073
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No