Information card for entry 7021418

Structure parameters

• Formula: C36 H48 Cl2 N4 O Sn2
• Calculated formula: C36 H48 Cl2 N4 O Sn2
• SMILES: [Sn]1(Cl)(O[Sn](Cl)(c2c(cccc2)CN(C)C)c2ccccc2CN(C)C)(c2c(C[N]1(C)C)cccc2)c1ccccc1CN(C)C
• Title of publication: Activation of E-Cl bonds (E = C, Si, Ge and Sn) by a C,N-chelated stannylene.
• Authors of publication: Padělková, Zdeňka; Svec, Petr; Pejchal, Vladimír; Růžička, Aleš
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2013
• Journal volume: 42
• Journal issue: 21
• Pages of publication: 7660 - 7671
• a: 9.518 ± 0.0012 Å
• b: 9.581 ± 0.0005 Å
• c: 23.3921 ± 0.0012 Å
• α: 78.972 ± 0.004°
• β: 81.579 ± 0.006°
• γ: 60.585 ± 0.007°
• Cell volume: 1820.4 ± 0.3 ų
• Cell temperature: 150 ± 1 K
• Ambient diffraction temperature: 150 ± 1 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0858
• Residual factor for significantly intense reflections: 0.0393
• Weighted residual factors for significantly intense reflections: 0.0535
• Weighted residual factors for all reflections included in the refinement: 0.0625
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No