Information card for entry 7023135

Structure parameters

• Common name: In(di-i-Pr-dithiocarbamate)3.1.5
• Formula: C28.5 H49.5 In N4.5 S6
• Calculated formula: C28.5 H49.5 In N4.5 S6
• Title of publication: Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.
• Authors of publication: Ehsan, Muhammad Ali; Peiris, T. A. Nirmal; Wijayantha, K. G. Upul; Olmstead, Marilyn M.; Arifin, Zainudin; Mazhar, Muhammad; Lo, K. M.; McKee, Vickie
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2013
• Journal volume: 42
• Journal issue: 30
• Pages of publication: 10919 - 10928
• a: 11.6384 ± 0.0004 Å
• b: 11.9426 ± 0.0004 Å
• c: 14.4945 ± 0.0003 Å
• α: 92.781 ± 0.002°
• β: 102.078 ± 0.002°
• γ: 111.637 ± 0.003°
• Cell volume: 1813.64 ± 0.11 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0272
• Residual factor for significantly intense reflections: 0.0219
• Weighted residual factors for significantly intense reflections: 0.0502
• Weighted residual factors for all reflections included in the refinement: 0.0515
• Goodness-of-fit parameter for all reflections included in the refinement: 1.06
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No