Information card for entry 7027347

Structure parameters

• Formula: C17 H27 N P2 S4 Si2
• Calculated formula: C17 H27 N P2 S4 Si2
• SMILES: S=[P@]1(S[Si](C)(C)C)S[P@@](=S)(N([Si](C)(C)C)C)c2c3c1cccc3ccc2.S=[P@@]1(S[Si](C)(C)C)S[P@](=S)(N([Si](C)(C)C)C)c2c3c1cccc3ccc2
• Title of publication: New P‒S‒N containing ring systems. Reaction of 2,4-(naphthalene-1,8-diyl)-1,3,2,4-dithiadiphosphetane 2,4-disulfide with methylbis(trimethylsilyl)amine
• Authors of publication: Kilián, Petr; Marek, Jaromír; Marek, Radek; Tousek, Jaromír; Humpa, Otakar; Slawin, Alexandra M. Z.; Touzín, Jirí; Novosad, Josef; Woollins, J. Derek
• Journal of publication: Journal of the Chemical Society, Dalton Transactions
• Year of publication: 1999
• Journal issue: 13
• Pages of publication: 2231
• a: 7.178 ± 0.002 Å
• b: 10.502 ± 0.003 Å
• c: 17.184 ± 0.005 Å
• α: 105.81 ± 0.02°
• β: 93.25 ± 0.02°
• γ: 100.94 ± 0.02°
• Cell volume: 1215.6 ± 0.6 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0537
• Residual factor for significantly intense reflections: 0.043
• Weighted residual factors for all reflections: 0.1232
• Weighted residual factors for significantly intense reflections: 0.114
• Goodness-of-fit parameter for all reflections: 1.018
• Goodness-of-fit parameter for significantly intense reflections: 1.034
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No