Information card for entry 7034396
| Formula |
Ga2 Ge S6 Sn |
| Calculated formula |
Ga2 Ge S6 Sn |
| Title of publication |
SnGa2GeS6: synthesis, structure, linear and nonlinear optical properties. |
| Authors of publication |
Lin, Zuohong; Li, Chao; Kang, Lei; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2015 |
| Journal volume |
44 |
| Journal issue |
16 |
| Pages of publication |
7404 - 7410 |
| a |
45.366 ± 0.009 Å |
| b |
7.2288 ± 0.0014 Å |
| c |
11.607 ± 0.002 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
3806.4 ± 1.2 Å3 |
| Cell temperature |
298 ± 2 K |
| Ambient diffraction temperature |
298 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
43 |
| Hermann-Mauguin space group symbol |
F d d 2 |
| Hall space group symbol |
F 2 -2d |
| Residual factor for all reflections |
0.048 |
| Residual factor for significantly intense reflections |
0.0416 |
| Weighted residual factors for significantly intense reflections |
0.1014 |
| Weighted residual factors for all reflections included in the refinement |
0.1044 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.133 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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