Information card for entry 7034776

Structure parameters

• Formula: C38 H50 N2 Si Sn
• Calculated formula: C38 H50 N2 Si Sn
• SMILES: [Sn]1(N(c2c(cccc2C(C)C)C(C)C)[Si](N1c1c(cccc1C(C)C)C(C)C)(c1ccccc1)c1ccccc1)(C)C
• Title of publication: Synthesis of chelating diamido Sn(iv) compounds from oxidation of Sn(ii) and directly from Sn(iv) precursors.
• Authors of publication: Mansell, S. M.; Russell, C. A.; Wass, D. F.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 21
• Pages of publication: 9756 - 9765
• a: 10.542 ± 0.003 Å
• b: 24.047 ± 0.006 Å
• c: 14.835 ± 0.004 Å
• α: 90°
• β: 110.7 ± 0.05°
• γ: 90°
• Cell volume: 3518 ± 2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0661
• Residual factor for significantly intense reflections: 0.0545
• Weighted residual factors for significantly intense reflections: 0.1121
• Weighted residual factors for all reflections included in the refinement: 0.1191
• Goodness-of-fit parameter for all reflections included in the refinement: 1.168
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No