Information card for entry 7034781

Structure parameters

• Formula: C52 H76 N4 Se2 Sn2
• Calculated formula: C52 H76 N4 Se2 Sn2
• SMILES: [Sn]12([Se][Sn]3([Se]1)N(c1c(cccc1C(C)C)C(C)C)CCN3c1c(cccc1C(C)C)C(C)C)N(c1c(cccc1C(C)C)C(C)C)CCN2c1c(cccc1C(C)C)C(C)C
• Title of publication: Synthesis of chelating diamido Sn(iv) compounds from oxidation of Sn(ii) and directly from Sn(iv) precursors.
• Authors of publication: Mansell, S. M.; Russell, C. A.; Wass, D. F.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 21
• Pages of publication: 9756 - 9765
• a: 12.4204 ± 0.0019 Å
• b: 13.1557 ± 0.0015 Å
• c: 34.524 ± 0.004 Å
• α: 79.399 ± 0.012°
• β: 87.652 ± 0.011°
• γ: 71.981 ± 0.009°
• Cell volume: 5272.2 ± 1.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0905
• Residual factor for significantly intense reflections: 0.0562
• Weighted residual factors for significantly intense reflections: 0.1109
• Weighted residual factors for all reflections included in the refinement: 0.1361
• Goodness-of-fit parameter for all reflections included in the refinement: 1.085
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No