Information card for entry 7034788

Structure parameters

• Formula: C38 H47 F3 N2 O3 S Si Sn
• Calculated formula: C38 H47 F3 N2 O3 S Si Sn
• SMILES: [Sn]1(N([Si](N1c1c(cccc1C(C)C)C(C)C)(c1ccccc1)c1ccccc1)c1c(cccc1C(C)C)C(C)C)(C)OS(=O)(=O)C(F)(F)F
• Title of publication: Synthesis of chelating diamido Sn(iv) compounds from oxidation of Sn(ii) and directly from Sn(iv) precursors.
• Authors of publication: Mansell, S. M.; Russell, C. A.; Wass, D. F.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 21
• Pages of publication: 9756 - 9765
• a: 10.7144 ± 0.0001 Å
• b: 18.721 ± 0.0002 Å
• c: 19.6338 ± 0.0002 Å
• α: 90°
• β: 103.551 ± 0.0011°
• γ: 90°
• Cell volume: 3828.6 ± 0.07 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 8
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0404
• Residual factor for significantly intense reflections: 0.0272
• Weighted residual factors for significantly intense reflections: 0.063
• Weighted residual factors for all reflections included in the refinement: 0.0679
• Goodness-of-fit parameter for all reflections included in the refinement: 0.969
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No