Information card for entry 7034940

Structure parameters

• Formula: C35 H47 Ga N2 O
• Calculated formula: C35 H47 Ga N2 O
• SMILES: [Ga]1(Oc2c(cc(C)cc2/C=N/c2c(cc(cc2C)C)C)C=[N]1c1c(cc(cc1C)C)C)(C(C)(C)C)C(C)(C)C
• Title of publication: Gallium and indium complexes containing the bis(imino)phenoxide ligand: synthesis, structural characterization and polymerization studies.
• Authors of publication: Ghosh, Swarup; Gowda, Ravikumar R.; Jagan, Rajamony; Chakraborty, Debashis
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2015
• Journal volume: 44
• Journal issue: 22
• Pages of publication: 10410 - 10422
• a: 11.1154 ± 0.0012 Å
• b: 12.4412 ± 0.0012 Å
• c: 13.0127 ± 0.0014 Å
• α: 72.868 ± 0.004°
• β: 70.445 ± 0.004°
• γ: 86.568 ± 0.004°
• Cell volume: 1619 ± 0.3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0825
• Residual factor for significantly intense reflections: 0.0528
• Weighted residual factors for significantly intense reflections: 0.1112
• Weighted residual factors for all reflections included in the refinement: 0.1251
• Goodness-of-fit parameter for all reflections included in the refinement: 1.053
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No