Information card for entry 7040898

Structure parameters

• Formula: Cd4 Cs Ga5 Te12
• Calculated formula: Cd4.0005 Cs Ga5.01 Te12
• Title of publication: AXXTe12 (A = Rb, Cs; X(II) = Mn, Zn, Cd; X(III) = Ga, In): quaternary semiconducting tellurides with very low thermal conductivities.
• Authors of publication: Lin, Hua; Chen, Hong; Zheng, Yu-Jun; Yu, Ju-Song; Wu, Li-Ming
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2016
• Journal volume: 45
• Journal issue: 44
• Pages of publication: 17606 - 17609
• a: 15.485 ± 0.008 Å
• b: 15.485 ± 0.008 Å
• c: 10.507 ± 0.014 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 2182 ± 3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 146
• Hermann-Mauguin space group symbol: R 3 :H
• Hall space group symbol: R 3
• Residual factor for all reflections: 0.0282
• Residual factor for significantly intense reflections: 0.0255
• Weighted residual factors for significantly intense reflections: 0.0641
• Weighted residual factors for all reflections included in the refinement: 0.0648
• Goodness-of-fit parameter for all reflections included in the refinement: 1.013
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No