Information card for entry 7040899
| Formula |
Ga5 Mn4 Rb Te12 |
| Calculated formula |
Ga4.9998 Mn4.0002 Rb Te12 |
| Title of publication |
AXXTe12 (A = Rb, Cs; X(II) = Mn, Zn, Cd; X(III) = Ga, In): quaternary semiconducting tellurides with very low thermal conductivities. |
| Authors of publication |
Lin, Hua; Chen, Hong; Zheng, Yu-Jun; Yu, Ju-Song; Wu, Li-Ming |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2016 |
| Journal volume |
45 |
| Journal issue |
44 |
| Pages of publication |
17606 - 17609 |
| a |
15.3432 ± 0.0006 Å |
| b |
15.3432 ± 0.0006 Å |
| c |
10.4161 ± 0.0008 Å |
| α |
90° |
| β |
90° |
| γ |
120° |
| Cell volume |
2123.6 ± 0.2 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
146 |
| Hermann-Mauguin space group symbol |
R 3 :H |
| Hall space group symbol |
R 3 |
| Residual factor for all reflections |
0.0294 |
| Residual factor for significantly intense reflections |
0.0285 |
| Weighted residual factors for significantly intense reflections |
0.0665 |
| Weighted residual factors for all reflections included in the refinement |
0.0669 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.038 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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