Information card for entry 7103954

Structure parameters

• Formula: C20 H36 Ga4 I8 Si4
• Calculated formula: C20 H36 Ga4 I8 Si4
• SMILES: C12C#[C]([Ga]3([C@@](C=2C#[C]([Ga]2([C@]1([Ga](I)(I)[I]2)[Si](C)(C)C)I)[Si](C)(C)C)([Ga](I)(I)[I]3)[Si](C)(C)C)I)[Si](C)(C)C
• Title of publication: The reaction of "GaI" with a 1,3-diyne: synthesis, characterisation and reactivity of a novel C‒C coupled ene‒diyne‒bis(gem-organodigallium(III)) complex
• Authors of publication: Baker, Robert J.; Jones, Cameron
• Journal of publication: Chemical Communications (Cambridge, United Kingdom)
• Year of publication: 2003
• Journal issue: 3
• Pages of publication: 390 - 391
• a: 10.504 ± 0.002 Å
• b: 18.886 ± 0.004 Å
• c: 12.232 ± 0.002 Å
• α: 90°
• β: 115.43 ± 0.03°
• γ: 90°
• Cell volume: 2191.5 ± 0.8 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0541
• Residual factor for significantly intense reflections: 0.0386
• Weighted residual factors for significantly intense reflections: 0.0812
• Weighted residual factors for all reflections included in the refinement: 0.087
• Goodness-of-fit parameter for all reflections included in the refinement: 1.058
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No