Information card for entry 7103953

Structure parameters

• Formula: C20 H36 Ga4 I8 Si4
• Calculated formula: C20 H36 Ga4 I8 Si4
• SMILES: I[Ga](I)/C(=C(\[C@@]1([Ga]2([I][Ga](I)[C@]1([Ga]([I]2)(I)I)[Si](C)(C)C)I)C#C[Si](C)(C)C)C#C[Si](C)(C)C)[Si](C)(C)C.I[Ga](I)/C(=C(\[C@]1([Ga]2([I][Ga](I)[C@@]1([Ga]([I]2)(I)I)[Si](C)(C)C)I)C#C[Si](C)(C)C)C#C[Si](C)(C)C)[Si](C)(C)C
• Title of publication: The reaction of "GaI" with a 1,3-diyne: synthesis, characterisation and reactivity of a novel C‒C coupled ene‒diyne‒bis(gem-organodigallium(III)) complex
• Authors of publication: Baker, Robert J.; Jones, Cameron
• Journal of publication: Chemical Communications (Cambridge, United Kingdom)
• Year of publication: 2003
• Journal issue: 3
• Pages of publication: 390 - 391
• a: 19.676 ± 0.004 Å
• b: 20.606 ± 0.004 Å
• c: 21.642 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 8775 ± 3 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0792
• Residual factor for significantly intense reflections: 0.0471
• Weighted residual factors for significantly intense reflections: 0.0823
• Weighted residual factors for all reflections included in the refinement: 0.0914
• Goodness-of-fit parameter for all reflections included in the refinement: 1.084
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No