Information card for entry 7107946

Structure parameters

• Formula: C56 H92 Si4 Sn2 Te4
• Calculated formula: C56 H92 Si4 Sn2 Te4
• SMILES: [Si]([Te]1[Sn]([Te]([Si](C(C)(C)C)(C(C)(C)C)c2ccccc2)[Sn]1[Te][Si](C(C)(C)C)(C(C)(C)C)c1ccccc1)[Te][Si](C(C)(C)C)(C(C)(C)C)c1ccccc1)(C(C)(C)C)(C(C)(C)C)c1ccccc1
• Title of publication: Cyclic and polycyclic tellurium-tin and tellurium-lead compounds ‒ synthesis, structures and thermal decomposition
• Authors of publication: Stephan Traut; Carsten von Hanisch; Alexander Peter Hahnel; Sven Stahl
• Journal of publication: Chem.Commun.
• Year of publication: 2012
• Journal volume: 48
• Pages of publication: 6984
• a: 29.684 ± 0.003 Å
• b: 8.3463 ± 0.0005 Å
• c: 30.084 ± 0.003 Å
• α: 90°
• β: 118.768 ± 0.006°
• γ: 90°
• Cell volume: 6533.4 ± 1.1 ų
• Cell temperature: 180 ± 2 K
• Ambient diffraction temperature: 180 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1948
• Residual factor for significantly intense reflections: 0.0716
• Weighted residual factors for significantly intense reflections: 0.0895
• Weighted residual factors for all reflections included in the refinement: 0.123
• Goodness-of-fit parameter for all reflections included in the refinement: 0.815
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No